The electronic states of ITO–MoS2: Experiment and theory

We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital...

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Drugi avtorji: López Galan, Óscar, Ramos Murillo, Manuel Antonio, Nogan, John, Ávila-García, Alejandro, Boll, Torben, Heilmaier, Martin
Format: Artículo
Jezik:en_US
Izdano: 2021
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Online dostop:https://doi.org/10.1557/s43579-021-00126-9
https://link.springer.com/article/10.1557/s43579-021-00126-9#citeas
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