New Formulation to Synthetize Semiconductor Bi2S3 Thin Films Using Chemical Bath Deposition for Optoelectronic Applications
Abstract: Anisotropic materials possess direction dependent properties as a result of symmetry within their structure. Bismuth sulfide (Bi2S3) is an important semiconductor exhibiting anisotropy due to its crystalline and stratified structure. In this manuscript we present a new and straightforwar...
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| Médium: | Artículo |
| Jazyk: | en_US |
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2022
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| On-line přístup: | https://doi.org/10.3390/sym14122487 https://www.mdpi.com/2073-8994/14/12/2487 |
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