Airy pattern on narrow photoluminescence spectrum of band to band recombination in CdTe: Te thin films
Semiconductor CdTe:Te films were deposited by means of rf sputtering on glass substrates. The excess of Te gave place to a high number of Cd-vacancies (VCd) producing p-type CdTe films. The density of carriers produced a high strength surface electric field which allowed obtain the bandgap value emp...
Uloženo v:
| Hlavní autor: | |
|---|---|
| Další autoři: | , , |
| Médium: | Artículo |
| Jazyk: | en_US |
| Vydáno: |
Elsevier
2018
|
| Témata: | |
| On-line přístup: | https://www.sciencedirect.com/science/article/pii/S0022231317309316 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|
