Airy pattern on narrow photoluminescence spectrum of band to band recombination in CdTe: Te thin films
Semiconductor CdTe:Te films were deposited by means of rf sputtering on glass substrates. The excess of Te gave place to a high number of Cd-vacancies (VCd) producing p-type CdTe films. The density of carriers produced a high strength surface electric field which allowed obtain the bandgap value emp...
Shranjeno v:
| Glavni avtor: | |
|---|---|
| Drugi avtorji: | , , |
| Format: | Artículo |
| Jezik: | en_US |
| Izdano: |
Elsevier
2018
|
| Teme: | |
| Online dostop: | https://www.sciencedirect.com/science/article/pii/S0022231317309316 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|
Komentirajte kot prvi!