The electronic states of ITO–MoS2: Experiment and theory
We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital...
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| Altres autors: | , , , , , |
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| Format: | Artículo |
| Idioma: | en_US |
| Publicat: |
2021
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| Matèries: | |
| Accés en línia: | https://doi.org/10.1557/s43579-021-00126-9 https://link.springer.com/article/10.1557/s43579-021-00126-9#citeas |
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