The electronic states of ITO–MoS2: Experiment and theory

The electronic states of ITO–MoS2: Experiment and theory

We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital...

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其他作者:	López Galan, Óscar, Ramos Murillo, Manuel Antonio, Nogan, John, Ávila-García, Alejandro, Boll, Torben, Heilmaier, Martin
格式:	Artículo
语言:	en_US
出版:	2021
主题:	Materials, Computational, Semiconductor, Density of States, Femi Level info:eu-repo/classification/cti/1
在线阅读:	https://doi.org/10.1557/s43579-021-00126-9 https://link.springer.com/article/10.1557/s43579-021-00126-9#citeas
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