Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type-I Heterojunction by DFT and the Landauer Approach
The electronic structure and thermoelectric properties of MoX2 (X = S, Se) Van der Waals heterojunctions are reported, with the intention of motivating the design of electronic devices using such materials. Calculations indicate the proposed heterojunctions are thermodynamically stable and present a...
Enregistré dans:
Autres auteurs: | López-Galán, Óscar, Perez, Israel, Ramos Murillo, Manuel Antonio, Nogan, John |
---|---|
Format: | Artículo |
Langue: | en_US |
Publié: |
2023
|
Sujets: | |
Accès en ligne: | https://doi.org/10.1002/admi.202202339 https://onlinelibrary.wiley.com/doi/10.1002/admi.202202339 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
On the Electronic Structure of 2H-MoS2: Correlating DFT Calculations and In-Situ Mechanical Bending on TEM
par: Ramos Murillo, Manuel Antonio
Publié: (2022) -
Electronic states and metallic character of carbide Co/MoS2 catalytic interface
Publié: (2021) -
Semimetal transition in curved MoS2/ MoSe2 Van der Waals heterojunction by dispersion‑corrected density functional theory
par: Ramos Murillo, Manuel Antonio
Publié: (2022) -
Study of indium tin oxide–MoS2 interface by atom probe tomography
par: Ramos Murillo, Manuel Antonio
Publié: (2019) -
Attributes on 2H-MoS₂ surfaces with Scanning Electron Microscopy: 7CP24-11
par: Adrián David Barrandey, et autres
Publié: (2024)