Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type-I Heterojunction by DFT and the Landauer Approach
The electronic structure and thermoelectric properties of MoX2 (X = S, Se) Van der Waals heterojunctions are reported, with the intention of motivating the design of electronic devices using such materials. Calculations indicate the proposed heterojunctions are thermodynamically stable and present a...
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Další autoři: | López-Galán, Óscar, Perez, Israel, Ramos Murillo, Manuel Antonio, Nogan, John |
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Médium: | Artículo |
Jazyk: | en_US |
Vydáno: |
2023
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Témata: | |
On-line přístup: | https://doi.org/10.1002/admi.202202339 https://onlinelibrary.wiley.com/doi/10.1002/admi.202202339 |
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