Influence of post‑deposition annealing on the chemical states of crystalline tantalum pentoxide films
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hex...
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| Rannpháirtithe: | , , , , , |
| Formáid: | Artículo |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
2018
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| Ábhair: | |
| Rochtain ar líne: | https://doi.org/10.1007/s00339-018-2198-9 https://link.springer.com/article/10.1007/s00339-018-2198-9 |
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