Influence of post‑deposition annealing on the chemical states of crystalline tantalum pentoxide films
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hex...
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| 其他作者: | , , , , , |
| 格式: | Artículo |
| 語言: | English |
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2018
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| 在線閱讀: | https://doi.org/10.1007/s00339-018-2198-9 https://link.springer.com/article/10.1007/s00339-018-2198-9 |
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