Influence of post‑deposition annealing on the chemical states of crystalline tantalum pentoxide films
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hexag...
Wedi'i Gadw mewn:
| Prif Awdur: | |
|---|---|
| Awduron Eraill: | , , , , , |
| Fformat: | Artículo |
| Iaith: | en_US |
| Cyhoeddwyd: |
2018
|
| Pynciau: | |
| Mynediad Ar-lein: | https://doi.org/10.1007/s00339-018-2198-9 https://doi.org/10.1007/s00339-018-2198-9 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|
Byddwch y cyntaf i adael sylw!