Effect of ion bombardment on the chemical properties of crystalline tantalum pentoxide films

Effect of ion bombardment on the chemical properties of crystalline tantalum pentoxide films

The effect of argon ion bombardment on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering was investigated by X-ray photoelectron spectroscopy. All samples were irradiated for several time intervals [(0.5, 3, 6, 9) min] and the Ta...

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Bibliografiske detaljer
Hovedforfatter:	Perez, Israel
Andre forfattere:	Sosa, Victor, Gamboa, Fidel, Elizalde Galindo, Jose Trinidad, Mani Gonzalez, Pierre Giovanni, Enriquez Carrejo, Jose Luis
Format:	Artículo
Sprog:	English
Udgivet:	2019
Fag:	Ion bombardment XPS info:eu-repo/classification/cti/1
Online adgang:	https://doi.org/10.1016/j.vacuum.2019.04.037 https://doi.org/10.1016/j.vacuum.2019.04.037
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