Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type-I Heterojunction by DFT and the Landauer Approach

Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type-I Heterojunction by DFT and the Landauer Approach

The electronic structure and thermoelectric properties of MoX2 (X = S, Se) Van der Waals heterojunctions are reported, with the intention of motivating the design of electronic devices using such materials. Calculations indicate the proposed heterojunctions are thermodynamically stable and present a...

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Gorde:
Xehetasun bibliografikoak
Beste egile batzuk: López-Galán, Óscar, Perez, Israel, Ramos Murillo, Manuel Antonio, Nogan, John
Formatua: Artículo
Hizkuntza:en_US
Argitaratua: 2023
Gaiak:
Materials, MoS2, Interface, DFT, Electronic Structure
info:eu-repo/classification/cti/1
Sarrera elektronikoa:https://doi.org/10.1002/admi.202202339
https://onlinelibrary.wiley.com/doi/10.1002/admi.202202339
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